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Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configurationA partially confined configuration for the growth of GaAs from melt in space was developed, consisting of a triangular prism containing the seed crystal and source material in the form of a rod. It is suggested that the configuration overcomes two obstacles in the growth of GaAs in space: total confinement in a quartz crucible and lack of arsenic pressure control. Ground tests of the configuration show that it is capable of crystal growth in space and is useful for studying the growth of GaAs from a free-surface melt on earth. The resulting chemical composition, electrical property variations, and phenomenological models to account for the results are presented.
Document ID
19890030414
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gatos, H. C.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J.
(Massachusetts Inst. of Tech. Cambridge, MA, United States)
Wu, Y.
(MIT Cambridge, MA, United States)
Date Acquired
August 14, 2013
Publication Date
October 1, 1988
Subject Category
Materials Processing
Report/Patent Number
IAF PAPER 88-362
Accession Number
89A17785
Distribution Limits
Public
Copyright
Other

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