Incoherent GaAlAs/GaAs semiconductor laser arraysThe fabrication of an incoherent laser array is reported. The main features of the arrays are low threshold index-guided laser elements, single-lobe far-field pattern, low astigmatism, low current operation, dense packing, and total electrical and optical isolation. With further development, this device should have applications in multihead optical-disk reading and writing, multifiber optical communications, and line-of-sight communications.
Document ID
19890030511
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hwang, C. J. (General Optronics Corp. Edison, NJ, United States)
Chen, J. S. (General Optronics Corp. Edison, NJ, United States)
Fu, R. J. (General Optronics Corp. Edison, NJ, United States)
Wu, D. H. (General Optronics Corp. Edison, NJ, United States)
Wang, C. S. (General Optronics Corp. Edison, NJ, United States)