NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxyMigration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.
Document ID
19890033951
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kim, Jae-Hoon
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Liu, John K.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Radhakrishnan, Gouri
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, Joseph
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Sakai, Shiro
(Florida, University Gainesville, United States)
Date Acquired
August 14, 2013
Publication Date
December 12, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 53
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
89A21322
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available