Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system

A set of formulas for a generalized axial stress in diamond and zinc-blende semiconductors under axial stress is derived to calculate stress-related Raman shifts. By analyzing known Raman data on cubic SiC under hydrostatic pressures, one of the Raman-stress coefficients was obtained, and the existing elastic stiffness constants of cubic SiC were optimized. A method for calculating the stress and strain in SiC films on (100) Si is proposed. It is suggested that the stress and strain expressions and the method of the stress and strain determinations in heterostructures are quite general and may be used for other systems.