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Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filamentCarbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.
Document ID
19890035289
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Malik, R. J.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Nottenberg, R. N.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Schubert, E. F.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Walker, J. F.
(Bell Telephone Labs., Inc. Murray Hill, NJ, United States)
Ryan, R. W.
(AT&T Bell Laboratories Murray Hill, NJ, United States)
Date Acquired
August 14, 2013
Publication Date
December 26, 1988
Publication Information
Publication: Applied Physics Letters
Volume: 53
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
89A22660
Funding Number(s)
CONTRACT_GRANT: NAS5-29488
Distribution Limits
Public
Copyright
Other

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