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High-performance Ka-band and V-band HEMT low-noise amplifiersQuarter-micron-gate-length high-electron-mobility transistors (HEMTs) have exhibited state-of-the-art low-noise performance at millimeter-wave frequencies, with minimum noise figures of 1.2 dB at 32 GHz and 1.8 dB at 60 GHz. At Ka-band, two-stage and three-stage HEMT low noise amplifiers have demonstrated noise figures of 1.7 and 1.9 dB, respectively, with associated gains of 17.0 and 24.0 dB at 32 GHz. At V-band, two stage and three-stage HEMT amplifiers yielded noise figures of 3.2 and 3.6 dB, respectively, with associated gains of 12.7 and 20.0 dB at 60 GHz. The 1-dB-gain compression point of all the amplifiers is greater than +6 dBm. The results clearly show the potential of short-gate-length HEMTs for high-performance millimeter-wave receiver applications.
Document ID
19890036751
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Duh, K. H. George
(General Electric Co. Syracuse, NY, United States)
Chao, Pane-Chane
(General Electric Co. Syracuse, NY, United States)
Smith, Phillip M.
(General Electric Co. Syracuse, NY, United States)
Lester, Luke F.
(General Electric Co. Syracuse, NY, United States)
Lee, Benjamin R.
(GE Electronics Laboratory Syracuse, NY, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1988
Publication Information
Publication: IEEE Transactions on Microwave Theory and Techniques
Volume: 36
ISSN: 0018-9480
Subject Category
Electronics And Electrical Engineering
Accession Number
89A24122
Funding Number(s)
CONTRACT_GRANT: JPL-957352
Distribution Limits
Public
Copyright
Other

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