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Evaluation of transport conditions during physical vapor transport growth of opto-electronic crystalsTransport conditions were evaluated during the vapor phase growth of mercurous chloride crystals in a closed tube. Experimentally observed growth rates were much smaller than those calculated by the Hertz-Knudsen (H-K) equation. The Arrhenius behavior of growth rate with the temperature was used to derive the sticking coefficient. A one-dimensional diffusion model was used to calculate the total mass flux and was compared with the condensing flux. It was predicted that growth occurred in the convecto-diffusive range.
Document ID
19890037826
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Singh, N. B.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Mazelsky, R.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Glicksman, M. E.
(Westinghouse Research and Development Center Pittsburgh, PA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Materials Processing
Report/Patent Number
AIAA PAPER 89-0229
Accession Number
89A25197
Funding Number(s)
CONTRACT_GRANT: NAS3-25274
Distribution Limits
Public
Copyright
Other

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