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Lateral charge transport from heavy-ion tracks in integrated circuit chipsA 256K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been simulated using a two-dimensional numerical code in cylindrical coordinates. The experimental bit-map data clearly show the manifestation of lateral charge transport in the creation of adjacent multiple-bit errors from a single heavy-ion track. The heavy-ion data further demonstrate the occurrence of multiple-bit errors from single ion tracks with sufficient stopping power. The qualitative numerical simulation results suggest that electric-field-funnel-aided (drift) collection accounts for single error generated by an ion passing through a charge-collecting junction, while multiple errors from a single ion track are due to lateral diffusion of ion-generated charge.
Document ID
19890038409
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Zoutendyk, J. A.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Schwartz, H. R.
(California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Nevill, L. R.
(Micron Technology, Inc. Boise, ID, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1988
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 35
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
89A25780
Distribution Limits
Public
Copyright
Other

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