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The effect of metal surface passivation on the Au-InP interactionThe effect of SiO2 encapsulation on reaction rates in the Au-InP system was studied. Scanning electron microscopy and x-ray photoelectron spectroscopy were used to investigate surface and/or interface morphologies and in-depth compositional profiles. It was found that the rate of dissolution of InP into Au and subsequent phase transformations are largely dependent on the condition of the free surface of the metalization. SiO2 capping of Au is reported for the first time to suppress the Au-InP reaction rate. The Au-InP interaction is shown to be quite similar to the Au-GaAs interaction despite differences in behavior of the group-V elements.
Document ID
19890043072
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fatemi, Navid S.
(Sverdrup Technology, Inc. Cleveland, OH, United States)
Weizer, Victor G.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
March 1, 1989
Publication Information
Publication: Journal of Applied Physics
Volume: 65
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Accession Number
89A30443
Distribution Limits
Public
Copyright
Other

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