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Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structuresAn optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs-AlGaAs n-i-p-i doping structure with a multiple-quantum-well structures on top of a distributed Bragg reflector, all grown by MBE. A modulation of approximately 60 percent is obtained on the test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 microW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.
Document ID
Document Type
Reprint (Version printed in journal)
Law, K.-K.
(California Univ. Santa Barbara, CA, United States)
Simes, R. J.
(California Univ. Santa Barbara, CA, United States)
Coldren, L. A.
(California Univ. Santa Barbara, CA, United States)
Gossard, A. C.
(California, University Santa Barbara, United States)
Maserjian, J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena; California, University Santa Barbara, United States)
Date Acquired
August 14, 2013
Publication Date
February 15, 1989
Publication Information
Publication: Optics Letters
Volume: 14
ISSN: 0146-9592
Subject Category
Electronics And Electrical Engineering
Accession Number
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