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A study of native oxides of beta-SiC using Auger electron spectroscopyThermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.
Document ID
19890045553
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chaudhry, M. Iqbal
(Clarkson University Potsdam, NY, United States)
Date Acquired
August 14, 2013
Publication Date
April 1, 1989
Publication Information
Publication: Journal of Materials Research
Volume: 4
ISSN: 0884-2914
Subject Category
Electronics And Electrical Engineering
Accession Number
89A32924
Distribution Limits
Public
Copyright
Other

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