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Crystal growth of SiC for electronic applicationsThe development of SiC as a high temperature semiconductor material is discussed, focusing on the epitaxial growth of single crystal SiC films on inexpensive single crystal silicon wafers. Progress in the improvement of film morphology and the elimination of antiphase disorder is examined. Potential candidate materials for high temperature semiconductor devices are compared and SiC films are evaluated.
Document ID
19890046254
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Matus, Lawrence G. (NASA Lewis Research Center Cleveland, OH, United States)
Powell, J. Anthony (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Silicon Carbide ''87
Location: Columbus, OH
Country: United States
Start Date: August 2, 1987
End Date: August 5, 1987
Sponsors: ACS
Accession Number
89A33625
Distribution Limits
Public
Copyright
Other

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