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Band lineup in GaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxyGaAs(1-x)Sbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs(1-x)Sbx/GaAs system. The method for determining the band offset Q(vh) is discussed in this strained-layer system.
Document ID
19890050296
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Ji, G.
(Illinois Univ. Urbana, IL, United States)
Agarwala, S.
(Illinois Univ. Urbana, IL, United States)
Huang, D.
(Illinois Univ. Urbana, IL, United States)
Chyi, J.
(Illinois Univ. Urbana, IL, United States)
Morkoc, H.
(Illinois, University Urbana, United States)
Date Acquired
August 14, 2013
Publication Date
November 15, 1988
Publication Information
Publication: Physical Review B, 3rd Series
Volume: 38
ISSN: 0163-1829
Subject Category
Solid-State Physics
Accession Number
89A37667
Funding Number(s)
CONTRACT_GRANT: DE-AC02-76ER-01198
Distribution Limits
Public
Copyright
Other

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