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Polymer etching in the oxygen afterglow - Increased etch rates with increased reactor loadingReactor loading has an effect on the etch rate (rate of decrease of film thickness) of films of polyvinylfluoride (Tedlar) and polyethylene exposed in the afterglow of an RF discharge in oxygen. The etch rate is found to increase with the total surface area of the polymer exposed in the reactor. The etch rates of polypyromellitimide (Kapton H) and polystyrene under these conditions are very low. However, the etch rate of these polymers is greatly enhanced by adding either Tedlar or polyethylene to the reactor. A kinetic model is proposed based on the premise that the oxygen atoms produced by the RF discharge react with Tedlar or polyethylene to produce a much more reactive species, which dominates the etching of the polymers studied.
Document ID
19890052743
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Lerner, N. R.
(NASA Ames Research Center Moffett Field, CA, United States)
Wydeven, T.
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 14, 2013
Publication Date
May 1, 1989
Publication Information
Publication: Electrochemical Society, Journal
Volume: 136
ISSN: 0013-4651
Subject Category
Nonmetallic Materials
Accession Number
89A40114
Distribution Limits
Public
Copyright
Other

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