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High-efficiency indium tin oxide/indium phosphide solar cellsImprovements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.
Document ID
19890057512
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Li, X.
(Midwest Research Inst. Golden, CO, United States)
Wanlass, M. W.
(Midwest Research Inst. Golden, CO, United States)
Gessert, T. A.
(Midwest Research Inst. Golden, CO, United States)
Emery, K. A.
(Midwest Research Inst. Golden, CO, United States)
Coutts, T. J.
(Solar Energy Research Institute Golden, CO, United States)
Date Acquired
August 14, 2013
Publication Date
June 26, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 54
ISSN: 0003-6951
Subject Category
Energy Production And Conversion
Accession Number
89A44883
Funding Number(s)
CONTRACT_GRANT: DE-AC02-83CH-10093
CONTRACT_GRANT: NASA ORDER C-30005-K
Distribution Limits
Public
Copyright
Other

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