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spike train generation and current-to-frequency conversion in silicon diodesA device physics model is developed to analyze spontaneous neuron-like spike train generation in current driven silicon p(+)-n-n(+) devices in cryogenic environments. The model is shown to explain the very high dynamic range (0 to the 7th) current-to-frequency conversion and experimental features of the spike train frequency as a function of input current. The devices are interesting components for implementation of parallel asynchronous processing adjacent to cryogenically cooled focal planes because of their extremely low current and power requirements, their electronic simplicity, and their pulse coding capability, and could be used to form the hardware basis for neural networks which employ biologically plausible means of information coding.
Document ID
19890061123
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Coon, D. D.
(Microtronics Associates Pittsburgh, PA, United States)
Perera, A. G. U.
(Pittsburgh, University PA, United States)
Date Acquired
August 14, 2013
Publication Date
July 31, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Funding Number(s)
CONTRACT_GRANT: NAS1-18850
Distribution Limits
Public
Copyright
Other