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Ballistic-electron-emission microscopy investigation of Schottky barrier interface formationBallistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.
Document ID
19890063824
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.101778
Authors
Hecht, M. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bell, L. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaiser, W. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
August 21, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
89A51195
Distribution Limits
Public
Copyright
Other

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