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Epitaxial thin film growth in outer spaceA new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.
Document ID
19890064478
Document Type
Conference Paper
Authors
Ignatiev, Alex
(Houston Univ. TX, United States)
Chu, C. W.
(Houston, University TX, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Subject Category
Materials Processing
Meeting Information
Meeting: International Conference and Exhibition on the Commercial and Industrial Uses of Outer Space
Location: Montreux
Country: Switzerland
Start Date: February 21, 1988
End Date: February 25, 1988
Accession Number
89A51849
Funding Number(s)
CONTRACT_GRANT: NAGW-977
Distribution Limits
Public
Copyright
Other

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