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Record Details

Record 87 of 5194
Ion-implanted high microwave power indium phosphide transistors
External Online Source: doi:10.1109/22.32214
Author and Affiliation:
Biedenbender, Michael D.(Cincinnati Univ., OH, United States)
Kapoor, Vik J.(Cincinnati, University, OH, United States)
Messick, Louis J.(Cincinnati Univ., OH, United States)
Nguyen, Richard(U.S. Navy, Naval Ocean Systems Center, San Diego, CA, United States)
Abstract: Encapsulated rapid thermal annealing (RTA) has been used in the fabrication of InP power MISFETs with ion-implanted source, drain, and active-channel regions. The MISFETs had a gate length of 1.4 microns. Six to ten gate fingers per device, with individual gate finger widths of 100 or 125 microns, were used to make MISFETs with total gate widths of 0.75, 0.8, or 1 mm. The source and drain contact regions and the channel region of the MISFETs were fabricated using Si implants in InP at energies from 60 to 360 keV with doses of (1-560) x 10 to the 12th/sq cm. The implants were activated using RTA at 700 C for 30 sec in N2 or H2 ambients using an Si3N4 encapsulant. The high-power high-efficiency MISFETs were characterized at 9.7 GHz, and the output microwave power density for the RTA conditions used was as high as 2.4 W/mm. For a 1-W input at 9.7 GHz gains up to 3.7 dB were observed, with an associated power-added efficiency of 29 percent and output power density 70 percent greater than that of GaAs MESFETs.
Publication Date: Sep 01, 1989
Document ID:
19890064773
(Acquired Nov 28, 1995)
Accession Number: 89A52144
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Report/Patent Number: AD-A224116
Document Type: Journal Article
Publication Information: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480); 37; 1321-132
Publisher Information: United States
Financial Sponsor: NASA; United States
Organization Source: Cincinnati Univ.; OH, United States
Naval Ocean Systems Center; San Diego, CA, United States
Description: 6p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: FIELD EFFECT TRANSISTORS; INDIUM PHOSPHIDES; ION IMPLANTATION; MICROWAVE CIRCUITS; VOLT-AMPERE CHARACTERISTICS; CZOCHRALSKI METHOD; GALLIUM ARSENIDES
Imprint And Other Notes: IEEE Transactions on Microwave Theory and Techniques (ISSN 0018-9480), vol. 37, Sept. 1989, p. 1321-1326. Research supported by NASA.
Miscellaneous Notes: Research supported by NASA
Availability Source: Other Sources
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