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Metal-silicon reaction rates - The effects of cappingEvidence is presented showing that the presence of the commonly used anti-reflection coating material Ta2O5 on the free surface of contact metallization can either suppress or enhance, depending on the system, the interaction that takes place at elevated temperatures between the metallization and the underlying Si. The cap layer is shown to suppress both the generation and annihilation of vacancies at the free surface of the metal which are necessary to support metal-Si interactons. Evidence is also presented indicating that the mechanical condition of the free metal surface has a significant effect on the metal-silicon reaction rate.
Document ID
19890064831
Document Type
Reprint (Version printed in journal)
Authors
Weizer, Victor G. (NASA Lewis Research Center Cleveland, OH, United States)
Fatemi, Navid S. (Sverdrup Technology, Inc. Middleburg Heights, OH, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Publication Information
Publication: Journal of Electronic Materials
Volume: 18
Issue: 1, 19
ISSN: 0361-5235
Subject Category
INORGANIC AND PHYSICAL CHEMISTRY
Distribution Limits
Public
Copyright
Other