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Anomalous effects in silicon solar cell irradiated by 1-MeV protonsSeveral silicon solar cells having thicknesses of approximately 63 microns, with and without back-surface fields (BSF), were irradiated with 1-MeV protons having fluences between 10 to the 10th and 10 to the 12th sq cm. The irradiations were performed using both normal and isotropic incidence on the rear surfaces of the cells. It was observed that after irradiation with fluences greater than 10 to the 11th protons/sq cm, all BSF cells degraded at a faster rate than cells without BSF. The irradiation results are analyzed using a model in which irradiation-induced defects in the BSF region are taken into account. Tentatively, it is concluded that an increase in defect density due to the formation of aluminum and proton complexes in BSF cells is responsible for the higher-power loss in the BSF cells compared to the non-BSF cells.
Document ID
19890066140
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kachare, R. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Anspaugh, B. E. (California Institute of Technology Jet Propulsion Laboratory, Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
September 15, 1989
Publication Information
Publication: Journal of Applied Physics
Volume: 66
ISSN: 0021-8979
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other