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Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistorThree double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.
Document ID
19890067046
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Mui, D. S. L.
(Illinois Univ. Urbana, IL, United States)
Patil, M. B.
(Illinois Univ. Urbana, IL, United States)
Morkoc, H.
(Illinois, University Urbana, United States)
Date Acquired
August 14, 2013
Publication Date
September 18, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
Electronics And Electrical Engineering
Accession Number
89A54417
Funding Number(s)
CONTRACT_GRANT: NAG3-613
CONTRACT_GRANT: AF-AFOSR-89-0239
Distribution Limits
Public
Copyright
Other

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