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Computer analysis of the negative differential resistance switching phenomenon of double-injection devicesBy directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.
Document ID
19890067592
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Shieh, Tsay-Jiu
(Texas, University Arlington, United States)
Date Acquired
August 14, 2013
Publication Date
September 1, 1989
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: 36
ISSN: 0018-9383
Subject Category
Electronics And Electrical Engineering
Accession Number
89A54963
Funding Number(s)
CONTRACT_GRANT: NSG-3022
Distribution Limits
Public
Copyright
Other

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