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Detection Of Gas-Phase Polymerization in SiH4 And GeH4Inelastic scattering of laser light found to indicate onset of gas-phase polymerization in plasma-enhanced chemical-vapor deposition (PECVD) of photoconductive amorphous hydrogenated silicon/germanium alloy (a-SiGe:H) film. In PECVD process, film deposited from radio-frequency glow-discharge plasma of silane (SiH4) and germane (GeH4) diluted with hydrogen. Gas-phase polymerization undesirable because it causes formation of particulates and defective films.
Document ID
19900000334
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Shing, Yuh-Han (Caltech)
Perry, Joseph W. (Caltech)
Allevato, Camillo E. (Caltech)
Date Acquired
August 14, 2013
Publication Date
July 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 7
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-17779
Accession Number
90B10334
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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