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viewing integrated-circuit interconnections by semBack-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.
Document ID
19900000436
Document Type
Other - NASA Tech Brief
Authors
Lawton, Russel A.
(Caltech)
Gauldin, Robert E.
(Caltech)
Ruiz, Ronald P.
(Caltech)
Date Acquired
August 14, 2013
Publication Date
September 1, 1990
Publication Information
Publication: NASA Tech Briefs
Volume: 14
Issue: 9
ISSN: 0145-319X
Subject Category
ELECTRONIC COMPONENTS AND CIRCUITS
Report/Patent Number
NPO-17635
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.