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Peeled film GaAs solar cells for space powerGallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.
Document ID
19900011971
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Wilt, D. M. (NASA Lewis Research Center Cleveland, OH., United States)
Deangelo, F. L. (NASA Lewis Research Center Cleveland, OH., United States)
Thomas, R. D. (NASA Lewis Research Center Cleveland, OH., United States)
Bailey, S. G. (NASA Lewis Research Center Cleveland, OH., United States)
Landis, G. A. (NASA Lewis Research Center Cleveland, OH., United States)
Brinker, D. J. (NASA Lewis Research Center Cleveland, OH., United States)
Fatemi, N. S. (Sverdrup Technology, Inc., Cleveland OH., United States)
Date Acquired
September 6, 2013
Publication Date
May 1, 1990
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-5453
NASA-TM-103125
NAS 1.15:103125
Accession Number
90N21287
Funding Number(s)
PROJECT: RTOP 506-41-11
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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