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Record 1 of 7104
In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 C
External Online Source: doi:10.1063/1.344090
Author and Affiliation:
Nieh, C. W.(California Institute of Technology, Pasadena, United States)
Lin, T. L.(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, United States)
Abstract: This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.
Publication Date: Oct 01, 1989
Document ID:
19900023666
(Acquired Nov 28, 1995)
Accession Number: 90A10721
Subject Category: SOLID-STATE PHYSICS
Document Type: Journal Article
Publication Information: Journal of Applied Physics (ISSN 0021-8979); 66; 3402-340
Publisher Information: United States
Contract/Grant/Task Num: NSF DMR-88-11795
Financial Sponsor: NASA; United States
Organization Source: California Inst. of Tech.; Pasadena, CA, United States
Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
Description: 3p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: COBALT COMPOUNDS; ELECTRON MICROSCOPY; EPITAXY; METAL FILMS; SILICIDES; ANNEALING; CRYSTAL GROWTH; FILM THICKNESS; NUCLEATION; PHOTOMICROGRAPHS; TRANSMISSION ELECTRON MICROSCOPY
Imprint And Other Notes: Journal of Applied Physics (ISSN 0021-8979), vol. 66, Oct. 1, 1989, p. 3402-3404. Research sponsored by SDIO.
Miscellaneous Notes: Research sponsored by SDIO
Availability Source: Other Sources
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