Silane and germane plasma diagnostics for depositing photosensitive a-SiGe:H films

Highly photosensitive a-SiGe:H films with a light-to-dark conductivity ratio of 8 x 103 and an optical bandgap of 1.40 eV have been produced by RF glow discharge using hydrogen dilution of SiH4 and GeH4 mixed gas plasma. The critical role of hydrogen dilution in GeH4 containing plasmas is to suppress the gas-phase polymerization and promote the incorporation of Ge into the film. It is observed that inelastic laser light scattering of the RF plasma is a sensitive method for monitoring the onset of the gas-phase polymerization. In situ coherent anti-Stokes Raman spectroscopy measurements have shown that the dissociation rate of GeH4 is a factor of three larger than that of SiH4.