Electromigration in thin-film photovoltaic module metallization systems

Electromigration as a possible thin-film module failure mechanism was investigated using several specially made, fully aluminized thin-film photovoltaic (TF-PV) modules. The effect of electromigration, as determined experimentally by measuring increases in electrical resistance across scribe lines, can be expressed as the product of a damage function, which correlates degradation rate with operating conditions such as current density and temperature, and a susceptibility function, which is defined by module design parameters, particularly aluminum purity and the configuration of the intercell region. Experimental measurements and derived acceleration factors suggest that open-circuit failure resulting from electromigration should not be a serious problem in present state-of-the-art TF-PV modules. Nevertheless, significant intercell resistance increases can result from long-term electromigration exposure, especially in future high-efficiency modules. The problem can be alleviated, however, by appropriate metallization applications and/or proper design of the intercell region.