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Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cellsThe radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.
Document ID
19900027878
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Hart, R. E., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Coutts, T. J.
(SERI Golden, CO, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1988
Subject Category
Energy Production And Conversion
Accession Number
90A14933
Distribution Limits
Public
Copyright
Other

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