Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEEMn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.
Document ID
19900029237
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Iyer, Shanthi N. (North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Abul-Fadl, Ali (North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Collis, Ward J. (North Carolina Agricultural and Technical State Univ. Greensboro, NC, United States)
Khorrami, Mohammad N. (North Carolina Agricultural and Technical State University Greensboro, United States)