NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiencyLow threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.
Document ID
19900030322
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Larsson, Anders
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Cody, Jeffrey
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lang, Robert J.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
November 27, 1989
Publication Information
Publication: Applied Physics Letters
Volume: 55
ISSN: 0003-6951
Subject Category
Lasers And Masers
Accession Number
90A17377
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available