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Parametric amplification in AgGaSe2AgGaSe2 has been grown, annealed, and characterized for the mid-IR. Characterization includes measurement of the average power-limiting factors including absorption and the variation of the refractive indices with temperature. Using specially annealed crystals 20 mm long and a Ho:YAG pump, parametric amplification at 3.39 microns has achieved a gain of 2.9 with a peak power input of only 8 MW/sq cm.
Document ID
19900031141
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Barnes, Norman P. (NASA Langley Research Center Hampton, VA, United States)
Gettemy, Donald J. (Los Alamos National Laboratory NM, United States)
Hietanen, Jack R. (NASA Langley Research Center Hampton, VA, United States)
Iannini, Rebecca A. (Cleveland Crystal, Inc. OH, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1989
Publication Information
Publication: Applied Optics
Volume: 28
ISSN: 0003-6935
Subject Category
Lasers And Masers
Accession Number
90A18196
Distribution Limits
Public
Copyright
Other

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