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Interface demarcation in GaAs by current pulsingGTE Laboratories is currently conducting a program to investigate the effect of convection in the melt on the properties of bulk grown gallium arsenide (GaAs). In addition to extensive ground based experimentation, a Get Away Special growth system has been developed to grow two GaAs crystals aboard the Space Shuttle, each with a one inch diameter. In order to perform a complete segregation analysis of the crystals grown in space, it is necessary to measure the interface shape and growth rate as well as the spatial distribution of the selenium dopant. The techniques for interface demarcation in selenium doped GaAs by current pulsing have been developed at GTE Laboratories and successful interface demarcation has been achieved for current pulses ranging from 20 to 90 amps, in both single crystal and polycrystalline regions.
Document ID
19900032738
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Matthiesen, D. H.
(GTE Labs., Inc. Waltham, MA, United States)
Kafalas, J. A.
(GTE Labs., Inc. Waltham, MA, United States)
Duchene, G. A.
(GTE Labs., Inc. Waltham, MA, United States)
Bellows, A. H.
(GTE Laboratories, Inc. Waltham, MA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1990
Subject Category
Solid-State Physics
Report/Patent Number
AIAA PAPER 90-0319
Accession Number
90A19793
Funding Number(s)
CONTRACT_GRANT: NAS3-24644
Distribution Limits
Public
Copyright
Other

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