Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applicationsA monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.
Document ID
19900035295
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Kim, J. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Katz, J. (JPL Pasadena, CA, United States)
Lin, S. H. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Psaltis, D. (California Institute of Technology Pasadena, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Laser Diode Technology and Applications Meeting