Ballistic electron emission microscopy and spectroscopy of Au/GaAs interfaces

This paper presents the first Schottky barrier results for the Au/GaAs(100) interface prepared completely in situ on GaAs grown by molecular-beam epitaxy. The resulting interface displays unexpected properties which can be interpreted in terms of enhanced electrode interdiffusion. In addition, the capability of molecular-beam epitaxy for in situ processing enables the stabilization of this interface against diffusion and allows the formation of a Au/GaAs system with nearly ideal properties. Newly developed ballistic electron spectroscopy and imaging techniques demonstrate that the heterogeneity present at the interface of Au/GaAs(100) fabricated on chemically treated GaAs substrates is removed.