NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Radiation dependence of inverter propagation delay from timing sampler measurementsA timing sampler consisting of 14 four-stage inverter-pair chains with different load capacitances was fabricated in 1.6-micron n-well CMOS and irradiated with cobalt-60 at 10 rad(Si)/s. For this CMOS process the measured results indicate that the rising delay increases by about 2.2 ns/Mrad(Si) and the falling delay increase is very small, i.e., less than 300 ps/Mrad(Si). The amount of radiation-induced delay depends on the size of the load capacitance. The maximum value observed for this effect was 5.65 ns/pF-Mrad(Si). Using a sensitivity analysis, the sensitivity of the rising delay to radiation can be explained by a simple timing model and the radiation sensitivity of dc MOSFET parameters. This same approach could not explain the insensitivity of the falling delay to radiation. This may be due to a failure of the timing model and/or trapping effects.
Document ID
19900038465
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Buehler, M. G.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Blaes, B. R.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lin, Y.-S.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
December 1, 1989
Publication Information
Publication: IEEE Transactions on Nuclear Science
Volume: 36
ISSN: 0018-9499
Subject Category
Electronics And Electrical Engineering
Accession Number
90A25520
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available