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Electronic shift register memory based on molecular electron-transfer reactionsThe design of a shift register memory at the molecular level is described in detail. The memory elements are based on a chain of electron-transfer molecules incorporated on a very large scale integrated (VLSI) substrate, and the information is shifted by photoinduced electron-transfer reactions. The design requirements for such a system are discussed, and several realistic strategies for synthesizing these systems are presented. The immediate advantage of such a hybrid molecular/VLSI device would arise from the possible information storage density. The prospect of considerable savings of energy per bit processed also exists. This molecular shift register memory element design solves the conceptual problems associated with integrating molecular size components with larger (micron) size features on a chip.
Document ID
Document Type
Reprint (Version printed in journal)
External Source(s)
Hopfield, J. J.
(California Institute of Technology, Pasadena, CA; AT&T Bell Telephone Laboratories, Murray Hill NJ, United States)
Onuchic, Jose Nelson
(Sao Paulo, Universidade Sao Carlos, Brazil)
Beratan, David N.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Publication Information
Publication: Journal of Physical Chemistry
Volume: 93
Issue: 17 1
ISSN: 0022-3654
Subject Category
Computer Operations And Hardware
Funding Number(s)
CONTRACT_GRANT: N00014-87-K-0377
Distribution Limits
No Preview Available