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Record Details

Record 36 of 8910
Wide-bandgap epitaxial heterojunction windows for silicon solar cells
External Online Source: doi:10.1109/16.46369
Author and Affiliation:
Landis, Geoffrey A.(NASA Lewis Research Center, Cleveland, OH, United States)
Loferski, Joseph J.(NASA Lewis Research Center, Cleveland, OH, United States)
Beaulieu, Roland(Brown University, Providence, United States)
Sekula-Moise, Patricia A.(NASA Lewis Research Center, Cleveland, OH, United States)
Vernon, Stanley M.(Spire Corp., Bedford, MA, United States)
et al.
Abstract: It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.
Publication Date: Feb 01, 1990
Document ID:
19900041304
(Acquired Nov 28, 1995)
Accession Number: 90A28359
Subject Category: ENERGY PRODUCTION AND CONVERSION
Document Type: Journal Article
Publication Information: IEEE Transactions on Electron Devices (ISSN 0018-9383); 37; 372-381
Publisher Information: United States
Contract/Grant/Task Num: DE-AC02-84ER-80186; NAS3-24641
Financial Sponsor: NASA; United States
Organization Source: NASA Lewis Research Center; Cleveland, OH, United States
Brown Univ.; Providence, RI, United States
Spire Corp.; Bedford, MA, United States
Description: 10p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: ENERGY CONVERSION EFFICIENCY; ENERGY GAPS (SOLID STATE); HETEROJUNCTION DEVICES; MINORITY CARRIERS; SOLAR CELLS; VAPOR DEPOSITION; CRYSTAL STRUCTURE; GALLIUM PHOSPHIDES; ORGANOMETALLIC COMPOUNDS; P-N JUNCTIONS; SOLAR SPECTRA; WINDOWS (INTERVALS); ZINC SULFIDES
Imprint And Other Notes: IEEE Transactions on Electron Devices (ISSN 0018-9383), vol. 37, Feb. 1990, p. 372-381.
Availability Source: Other Sources
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