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Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafersPreviously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.
Document ID
19900042897
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Powell, J. A.
(NASA Lewis Research Center Cleveland, OH, United States)
Larkin, D. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Matus, L. G.
(NASA Lewis Research Center Cleveland, OH, United States)
Choyke, W. J.
(NASA Lewis Research Center Cleveland, OH, United States)
Bradshaw, J. L.
(Pittsburgh, University PA, United States)
Date Acquired
August 14, 2013
Publication Date
April 9, 1990
Publication Information
Publication: Applied Physics Letters
Volume: 56
ISSN: 0003-6951
Subject Category
Solid-State Physics
Accession Number
90A29952
Distribution Limits
Public
Copyright
Other

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