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Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxideWhile dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.
Document ID
19900049744
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Gessert, T. A.
(Midwest Research Inst. Golden, CO, United States)
Li, X.
(Midwest Research Inst. Golden, CO, United States)
Wanlass, M. W.
(Midwest Research Inst. Golden, CO, United States)
Nelson, A. J.
(Midwest Research Inst. Golden, CO, United States)
Coutts, T. J.
(SERI Golden, CO, United States)
Date Acquired
August 14, 2013
Publication Date
June 1, 1990
Publication Information
Publication: Journal of Vacuum Science and Technology A
Volume: 8
ISSN: 0734-2101
Subject Category
Solid-State Physics
Accession Number
90A36799
Funding Number(s)
CONTRACT_GRANT: NASA ORDER C-3000-K
CONTRACT_GRANT: DE-AC02-83CH-10093
Distribution Limits
Public
Copyright
Other

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