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Microwave response of a HEMT photoconductive detectorInterdigitated photoconductive detectors with 5-micron geometry have been fabricated on HEMT material and their optical response characteristics at 820 nm have been examined at dc and in the frequency range of 2-8 GHz. These have been compared with characteristics of similar 1-micron devices on MESFET material. The shapes of the frequency responses were found to differ, but the useful bandwidth of both types of devices was found to be similar.
Document ID
19900050246
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Claspy, P. C.
(Case Western Reserve University Cleveland, OH, United States)
Bhasin, K. B.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 14, 2013
Publication Date
January 1, 1989
Publication Information
Publication: Microwave and Optical Technology Letters
Volume: 2
ISSN: 0895-2477
Subject Category
Electronics And Electrical Engineering
Accession Number
90A37301
Distribution Limits
Public
Copyright
Other

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