Effect of Ga and P dopants on the thermoelectric properties of n-type SiGeThe purpose of this study was to hot-press improved n-type Si80Ge20/GaP samples directly (without any heat treatment) and to confirm that a Ga/P ratio less than one increases the solubility of P and, hence, improves the power factor and Z. One of the three samples (Ga/P = 0.43) had an improvement in Z of about 20 percent between 400 and 1000 C over that for standard SiGe. This demonstrates that improved samples can be pressed directly and that a Ga/P ratio less than one is necessary. The other two samples (Ga/P = 0.33 and 0.50) had Z's equal to or less than that of standard SiGe but had a lower hot-pressing temperature than the improved sample.
Document ID
19900051085
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Draper, S. L. (NASA Lewis Research Center Cleveland, OH, United States)
Vandersande, J. W. (NASA Lewis Research Center Cleveland, OH, United States)
Wood, C. (JPL Pasadena, CA, United States)
Masters, R. (NASA Lewis Research Center Cleveland, OH, United States)
Raag, V. (Thermo Electron Technologies Corp. Waltham, MA, United States)