Concepts for thin-film GaAs concentrator cellsThe development of advanced GaAs concentrator solar cells, and in particular, the use of CLEFT (cleavage of lateral epitaxial films for transfer) processes for formation of thin-film structures is reported. The use of CLEFT has made possible processing of the back, and cells with back surface grids are discussed. Data on patterned junction development are presented; such junctions are expected to be useful in back surface applications requiring point contacts, grating structures, and interdigitated back contacts. CLEFT concentrator solar cells with grids on the front and back surfaces are reported here; these cells are 4 microns thick and are bonded to glass covers for support. Air mass zero efficiency of 18.8 percent has been obtained for a CLEFT concentrator operating at 18.5 suns.
Document ID
19900051092
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Spitzer, M. B. (Kopin Corp. Taunton, MA, United States)
Gale, R. P. (Kopin Corp. Taunton, MA, United States)
Mcclelland, R. (Kopin Corp. Taunton, MA, United States)
King, B. (Kopin Corp. Taunton, MA, United States)
Dingle, J. (Kopin Corp. Taunton, MA, United States)