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Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on SiThe quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.
Document ID
19900052302
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lao, Pudong
(University of Southern California Los Angeles, CA, United States)
Tang, Wade C.
(University of Southern California Los Angeles, CA, United States)
Rajkumar, K. C.
(University of Southern California Los Angeles, CA, United States)
Guha, S.
(University of Southern California Los Angeles, CA, United States)
Madhukar, A.
(Southern California, University Los Angeles, CA, United States)
Liu, J. K.
(University of Southern California Los Angeles, CA, United States)
Grunthaner, F. J.
(JPL Pasadena, CA, United States)
Date Acquired
August 14, 2013
Publication Date
May 15, 1990
Publication Information
Publication: Journal of Applied Physics
Volume: 67
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
90A39357
Funding Number(s)
CONTRACT_GRANT: N00014-85-K-0522
CONTRACT_GRANT: DAAL03-86-K-0102
Distribution Limits
Public
Copyright
Other

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