Room-temperature InGaAs detector arrays for 2.5 micronsThis paper describes new alloy heterojunction detectors of In(.8)Ga(.2)As/InAs(.6)P(.4) which can detect light between 1.7 and 2.6 microns with 50 percent quantum efficiency and 5 mA/sq cm dark current (-1 V) density at room temperature. Wafer probe data showed that over 50 good contiguous 100 micron diameter devices (spaced 400 microns) could be made on a 25 x 30 mm wafer with overall yield above 93 percent. The ability to operate under -1 V reverse bias makes these devices ideally compatible with existing commercial multiplexer readouts.
Document ID
19900057102
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Olsen, G. H. (EPITAXX, Inc. Princeton, NJ, United States)
Joshi, A. M. (EPITAXX, Inc. Princeton, NJ, United States)
Mason, S. M. (EPITAXX, Inc. Princeton, NJ, United States)
Woodruff, K. M. (EPITAXX, Inc. Princeton, NJ, United States)
Mykietyn, E. (EPITAXX, Inc. Princeton, NJ, United States)