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Contribution of the graded region of a HgCdTe diode to its saturation currentExperimental results show that the contribution of the graded region to the current of Hg(1-x)Cd(x)Te diodes is not negligible, as compared to that of the p type bulk. The theoretical analysis reveals the influence of the electric field present outside the depletion region on the current generated by the graded region. The analysis shows the importance of the lifetime profile in the graded region, which is a function of the specific recombination mechanism and its dependence on the local dopant concentration. The effect of parameters such as substrate concentration, surface concentration, and junction depth on this current is discussed.
Document ID
19900058893
Document Type
Reprint (Version printed in journal)
Authors
Schacham, S. E. (NASA Lewis Research Center Cleveland, OH; Technion - Israel Institute of Technology, Haifa, United States)
Finkman, E. (Technion - Israel Institute of Technology Haifa, United States)
Date Acquired
August 14, 2013
Publication Date
July 1, 1990
Publication Information
Publication: Optical Engineering
Volume: 29
ISSN: 0091-3286
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other