Doped-channel heterojunction structures for millimeter-wave discrete devices and MMICs

AlGaAs/InGaAs/GaAs-type heterostructures with one or two channels have been used to fabricate both discrete devices and monolithic amplifiers for millimeter-wave operation. The authors report that 0.25-micron x 50-micron discrete devices delivered a power density of 1 W/mm with 2.9-dB gain and 25 percent efficiency at 60 GHz. A 100-micron monolithic single-stage amplifier demonstrated a record 40 percent efficiency at 32 GHz, and a two-stage monolithic amplifier achieved a record 31.3 percent efficiency with 72-mW power and 13-dB gain at 32 GHz.