NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc-blende structureThe source of the asymmetry in the dislocation morphology exhibited in the epitaxial growth of compound semiconductors on (100) was investigated. A thickness wedge of p- and n-type GaAs(0.95)P(0.05) was grown on GaAs by metalorganic chemical vapor deposition, and the effect of misorientation on the resolved shear stress for each slip system was calculated and eliminated as the source of the asymmetry. Another potential source of asymmetry, the thickness gradient, was also eliminated. Results show that the substrate misorientation and the thickness gradient do not significantly contribute to the asymmetry and that the dominant contributor to the asymmetry of misfit dislocations in the (001) epitaxial interface can be attributed to the differences in the Peierls barriers between the two types of dilocations in GaAsP/GaAs.
Document ID
19900063837
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Fox, Bradley A.
(Virginia Univ. Charlottesville, VA, United States)
Jesser, William A.
(Virginia, University Charlottesville, United States)
Date Acquired
August 14, 2013
Publication Date
September 15, 1990
Publication Information
Publication: Journal of Applied Physics
Volume: 68
ISSN: 0021-8979
Subject Category
Solid-State Physics
Accession Number
90A50892
Funding Number(s)
CONTRACT_GRANT: NAG1-350
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available