Reduced pressure MOCVD of C-axis oriented BiSrCaCuO thin films

BiSrCaCuO thin films were deposited on MgO (100) single-crystal substrates by metalorganic chemical vapor deposition at 500 C and 2 torr using fluorinated beta-diketonate complexes of Sr, Ca, and Cu and triphenylbismuth. An inverted vertical reaction chamber allowed uniform film growth over large areas (7.7 cm diameter). The as-deposited films were amorphous mixtures of oxides and fluorides; a two-step annealing protocol (750 C + 850-870 C) was developed which gives c-axis oriented films of Bi2Sr2Ca1Cu2O(x). The postannealed films showed onsets in the resistive transition of 110 K, and zero resistivity was achieved by 83 K. Critical current densities as high as 11,000 A/sq cm were obtained at 25 K.